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1 Ergebnisse
1
Growth of ZnSe Epilayer on Si Using Ge/GexSi1-x Buffer Stru..:
Yang, Tsung-Hsi
;
Yang, Chu Shou
;
Luo, Guangli
...
Japanese Journal of Applied Physics. 43 (2004) 6B - p. L811 , 2004
Link:
https://doi.org/10.1143/jjap.43.l811
RT Journal T1
Growth of ZnSe Epilayer on Si Using Ge/GexSi1-x Buffer Structure
UL https://suche.suub.uni-bremen.de/peid=cr-10.1143_jjap.43.l811&Exemplar=1&LAN=DE A1 Yang, Tsung-Hsi A1 Yang, Chu Shou A1 Luo, Guangli A1 Chou, Wu Ching A1 Yang, Tsung-Yeh A1 Chang, Edward Yi A1 Chang, Chun-Yen PB IOP Publishing YR 2004 SN 0021-4922 SN 1347-4065 JF Japanese Journal of Applied Physics VO 43 IS 6B SP L811 LK http://dx.doi.org/https://doi.org/10.1143/jjap.43.l811 DO https://doi.org/10.1143/jjap.43.l811 SF ELIB - SuUB Bremen
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