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1 Ergebnisse
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Analysis of Origin of Threshold Voltage Change Induced by I..:
Manabe, Kenzo
;
Takahashi, Kensuke
;
Hase, Takashi
...
Japanese Journal of Applied Physics. 45 (2006) 4S - p. 2919 , 2006
Link:
https://doi.org/10.1143/jjap.45.2919
RT Journal T1
Analysis of Origin of Threshold Voltage Change Induced by Impurity in Fully Silicided NiSi/SiO2 Gate Stacks
UL https://suche.suub.uni-bremen.de/peid=cr-10.1143_jjap.45.2919&Exemplar=1&LAN=DE A1 Manabe, Kenzo A1 Takahashi, Kensuke A1 Hase, Takashi A1 Ikarashi, Nobuyuki A1 Oshida, Makiko A1 Tatsumi, Toru A1 Watanabe, Hirohito A1 Watanabe, Heiji A1 Yasutake, Kiyoshi PB IOP Publishing YR 2006 SN 0021-4922 SN 1347-4065 JF Japanese Journal of Applied Physics VO 45 IS 4S SP 2919 LK http://dx.doi.org/https://doi.org/10.1143/jjap.45.2919 DO https://doi.org/10.1143/jjap.45.2919 SF ELIB - SuUB Bremen
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