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Data Retention Characteristics of Nitride-Based Charge Trap..:
Lee, Jang-Sik
;
Kang, Chang-Seok
;
Shin, Yoo-Cheol
...
Japanese Journal of Applied Physics. 45 (2006) 4S - p. 3213 , 2006
Link:
https://doi.org/10.1143/jjap.45.3213
RT Journal T1 <Title>Data Retention Characteristics of Nitride-Based Charge Trap Memory Devices with High-k Dielectrics and High-Work-Function Metal Gates for Multi-Gigabit Flash Memory</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1143_jjap.45.3213&Exemplar=1&LAN=DE A1 Lee, Jang-Sik A1 Kang, Chang-Seok A1 Shin, Yoo-Cheol A1 Lee, Chang-Hyun A1 Park, Ki-Tae A1 Sel, Jong-Sun A1 Kim, Viena A1 Choe, Byeong-In A1 Sim, Jae-Sung A1 Choi, Jungdal A1 Kim, Kinam PB IOP Publishing YR 2006 SN 0021-4922 SN 1347-4065 JF Japanese Journal of Applied Physics VO 45 IS 4S SP 3213 LK http://dx.doi.org/https://doi.org/10.1143/jjap.45.3213 DO https://doi.org/10.1143/jjap.45.3213 SF ELIB - SuUB Bremen
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