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1 Ergebnisse
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Tinv Scaling and Gate Leakage Reduction for n-Type Metal Ox..:
Oshiyama, Itaru
;
Tai, Kaori
;
Hirano, Tomoyuki
...
Japanese Journal of Applied Physics. 47 (2008) 4S - p. 2379 , 2008
Link:
https://doi.org/10.1143/jjap.47.2379
RT Journal T1
Tinv Scaling and Gate Leakage Reduction for n-Type Metal Oxide Semiconductor Field Effect Transistor with HfSix/HfO2 Gate Stack by Interfacial Layer Formation Using Ozone–Water-Last Treatment
UL https://suche.suub.uni-bremen.de/peid=cr-10.1143_jjap.47.2379&Exemplar=1&LAN=DE A1 Oshiyama, Itaru A1 Tai, Kaori A1 Hirano, Tomoyuki A1 Yamaguchi, Shinpei A1 Tanaka, Kazuaki A1 Hagimoto, Yoshiya A1 Uemura, Takayuki A1 Ando, Takashi A1 Watanabe, Koji A1 Yamamoto, Ryo A1 Kanda, Saori A1 Wang, Junli A1 Tateshita, Yasushi A1 Wakabayashi, Hitoshi A1 Tagawa, Yukio A1 Tsukamoto, Masanori A1 Iwamoto, Hayato A1 Saito, Masaki A1 Oshima, Masaharu A1 Toyoda, Satoshi A1 Nagashima, Naoki A1 Kadomura, Shingo PB IOP Publishing YR 2008 SN 0021-4922 SN 1347-4065 JF Japanese Journal of Applied Physics VO 47 IS 4S SP 2379 LK http://dx.doi.org/https://doi.org/10.1143/jjap.47.2379 DO https://doi.org/10.1143/jjap.47.2379 SF ELIB - SuUB Bremen
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