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A Physical Model with the Effects of Self-Heating and Varia..:
Liu, Yuan
;
Yao, Ruo-He
;
Li, Bin
Japanese Journal of Applied Physics. 47 (2008) 6R - p. 4436 , 2008
Link:
https://doi.org/10.1143/jjap.47.4436
RT Journal T1 <Title>A Physical Model with the Effects of Self-Heating and Variable Resistance in Above-Threshold Region for Hydrogenated Amorphous Silicon Thin Film Transistor</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1143_jjap.47.4436&Exemplar=1&LAN=DE A1 Liu, Yuan A1 Yao, Ruo-He A1 Li, Bin PB IOP Publishing YR 2008 SN 0021-4922 SN 1347-4065 JF Japanese Journal of Applied Physics VO 47 IS 6R SP 4436 LK http://dx.doi.org/https://doi.org/10.1143/jjap.47.4436 DO https://doi.org/10.1143/jjap.47.4436 SF ELIB - SuUB Bremen
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