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1 Ergebnisse
1
Quantum Mechanical Effects on the Threshold Voltage of Doub..:
Hu, Guang-Xi
;
Liu, Ran
;
Qiu, Zhi-Jun
..
Japanese Journal of Applied Physics. 49 (2010) 3R - p. 034001 , 2010
Link:
https://doi.org/10.1143/jjap.49.034001
RT Journal T1 <Title>Quantum Mechanical Effects on the Threshold Voltage of Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistors</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1143_jjap.49.034001&Exemplar=1&LAN=DE A1 Hu, Guang-Xi A1 Liu, Ran A1 Qiu, Zhi-Jun A1 Wang, Ling-Li A1 Tang, Ting-Ao PB IOP Publishing YR 2010 SN 0021-4922 SN 1347-4065 JF Japanese Journal of Applied Physics VO 49 IS 3R SP 034001 LK http://dx.doi.org/https://doi.org/10.1143/jjap.49.034001 DO https://doi.org/10.1143/jjap.49.034001 SF ELIB - SuUB Bremen
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