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1 Ergebnisse
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In situ Si Wafer Surface Temperature Measurement during Fla..:
Yamada, Yoshiro
;
Aoyama, Takayuki
;
Chino, Hajime
...
Japanese Journal of Applied Physics. 49 (2010) 4S - p. 04DA20 , 2010
Link:
https://doi.org/10.1143/jjap.49.04da20
RT Journal T1
In situ Si Wafer Surface Temperature Measurement during Flash Lamp Annealing
UL https://suche.suub.uni-bremen.de/peid=cr-10.1143_jjap.49.04da20&Exemplar=1&LAN=DE A1 Yamada, Yoshiro A1 Aoyama, Takayuki A1 Chino, Hajime A1 Hiraka, Kensuke A1 Ishii, Juntaro A1 Kadoya, Satoru A1 Kato, Shinichi A1 Kiyama, Hiroki A1 Kondo, Hideki A1 Kuroiwa, Tohru A1 Matsuo, Kaoru A1 Owada, Tatsushi A1 Shimizu, Takao A1 Yokomori, Takehiko PB IOP Publishing YR 2010 SN 0021-4922 SN 1347-4065 JF Japanese Journal of Applied Physics VO 49 IS 4S SP 04DA20 LK http://dx.doi.org/https://doi.org/10.1143/jjap.49.04da20 DO https://doi.org/10.1143/jjap.49.04da20 SF ELIB - SuUB Bremen
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