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1 Ergebnisse
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Stress Modulation of Silicon Nitride Film by Initial Deposi..:
Tian, Jingze
;
Zuo, Biao
;
Lu, Wei
..
Japanese Journal of Applied Physics. 49 (2010) 5S2 - p. 05FB01 , 2010
Link:
https://doi.org/10.1143/jjap.49.05fb01
RT Journal T1 <Title>Stress Modulation of Silicon Nitride Film by Initial Deposition Conditions for Transistor Carrier Mobility Enhancement</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1143_jjap.49.05fb01&Exemplar=1&LAN=DE A1 Tian, Jingze A1 Zuo, Biao A1 Lu, Wei A1 Zhou, Meisheng A1 Hsia, Liang Choo PB IOP Publishing YR 2010 SN 0021-4922 SN 1347-4065 JF Japanese Journal of Applied Physics VO 49 IS 5S2 SP 05FB01 LK http://dx.doi.org/https://doi.org/10.1143/jjap.49.05fb01 DO https://doi.org/10.1143/jjap.49.05fb01 SF ELIB - SuUB Bremen
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