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1 Ergebnisse
1
Program/Erase Model of Nitride-Based NAND-Type Charge Trap ..:
Kim, Doo-Hyun
;
Cho, Seongjae
;
Li, Dong Hua
...
Japanese Journal of Applied Physics. 49 (2010) 8R - p. 084301 , 2010
Link:
https://doi.org/10.1143/jjap.49.084301
RT Journal T1
Program/Erase Model of Nitride-Based NAND-Type Charge Trap Flash Memories
UL https://suche.suub.uni-bremen.de/peid=cr-10.1143_jjap.49.084301&Exemplar=1&LAN=DE A1 Kim, Doo-Hyun A1 Cho, Seongjae A1 Li, Dong Hua A1 Yun, Jang-Gn A1 Lee, Jung Hoon A1 Lee, Gil Sung A1 Kim, Yoon A1 Shim, Won Bo A1 Park, Se Hwan A1 Kim, Wandong A1 Shin, Hyungcheol A1 Park, Byung-Gook PB IOP Publishing YR 2010 SN 0021-4922 SN 1347-4065 JF Japanese Journal of Applied Physics VO 49 IS 8R SP 084301 LK http://dx.doi.org/https://doi.org/10.1143/jjap.49.084301 DO https://doi.org/10.1143/jjap.49.084301 SF ELIB - SuUB Bremen
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