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1 Ergebnisse
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Data Retention Characteristics for Gate Oxide Schemes in Su..:
Ryu, Seong-Wan
;
Yoo, Minsoo
;
Choi, Deuksung
..
Japanese Journal of Applied Physics. 50 (2011) 4S - p. 04DD01 , 2011
Link:
https://doi.org/10.1143/jjap.50.04dd01
RT Journal T1
Data Retention Characteristics for Gate Oxide Schemes in Sub-50 nm Saddle-Fin Transistor Dynamic-Random-Access-Memory Technology
UL https://suche.suub.uni-bremen.de/peid=cr-10.1143_jjap.50.04dd01&Exemplar=1&LAN=DE A1 Ryu, Seong-Wan A1 Yoo, Minsoo A1 Choi, Deuksung A1 Cha, Seonyong A1 Jeong, Jae-Goan PB IOP Publishing YR 2011 SN 0021-4922 SN 1347-4065 JF Japanese Journal of Applied Physics VO 50 IS 4S SP 04DD01 LK http://dx.doi.org/https://doi.org/10.1143/jjap.50.04dd01 DO https://doi.org/10.1143/jjap.50.04dd01 SF ELIB - SuUB Bremen
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