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1 Ergebnisse
1
Effect of Low-Energy Ga Ion Implantation on Selective Growt..:
Isiizumi, Kazuya
;
Kikkawa, Jun
;
Nakamura, Yoshiaki
..
Japanese Journal of Applied Physics. 50 (2011) 6S - p. 06GC02 , 2011
Link:
https://doi.org/10.1143/jjap.50.06gc02
RT Journal T1
Effect of Low-Energy Ga Ion Implantation on Selective Growth of Gallium Nitride Layer on Silicon Nitride Surfaces Using Metal Organic Chemical Vapor Deposition
UL https://suche.suub.uni-bremen.de/peid=cr-10.1143_jjap.50.06gc02&Exemplar=1&LAN=DE A1 Isiizumi, Kazuya A1 Kikkawa, Jun A1 Nakamura, Yoshiaki A1 Sakai, Akira A1 Yanagisawa, Junichi PB IOP Publishing YR 2011 SN 0021-4922 SN 1347-4065 JF Japanese Journal of Applied Physics VO 50 IS 6S SP 06GC02 LK http://dx.doi.org/https://doi.org/10.1143/jjap.50.06gc02 DO https://doi.org/10.1143/jjap.50.06gc02 SF ELIB - SuUB Bremen
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