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1 Ergebnisse
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Variation of Threshold Voltage and ON-Cell Current Caused b..:
Kim, Wandong
;
Kim, Yoon
;
Park, Se Hwan
...
Japanese Journal of Applied Physics. 51 (2012) 7R - p. 074301 , 2012
Link:
https://doi.org/10.1143/jjap.51.074301
RT Journal T1 <Title>Variation of Threshold Voltage and ON-Cell Current Caused by Cell Gate Length Fluctuation in Virtual Source/Drain NAND Flash Memory</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1143_jjap.51.074301&Exemplar=1&LAN=DE A1 Kim, Wandong A1 Kim, Yoon A1 Park, Se Hwan A1 Seo, Joo Yun A1 Kim, Do Bin A1 Park, Byung-Gook PB IOP Publishing YR 2012 SN 0021-4922 SN 1347-4065 JF Japanese Journal of Applied Physics VO 51 IS 7R SP 074301 LK http://dx.doi.org/https://doi.org/10.1143/jjap.51.074301 DO https://doi.org/10.1143/jjap.51.074301 SF ELIB - SuUB Bremen
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