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A New Method to Induce Tensile Stress in Silicon on Insulat..:
Maitrejean, Sylvain
;
Loubet, Nicolas
;
Augendre, Emmanuel
...
ECS Transactions. 66 (2015) 4 - p. 47-56 , 2015
Link:
https://doi.org/10.1149/06604.0047ecst
RT Journal T1
A New Method to Induce Tensile Stress in Silicon on Insulator Substrate: From Material Analysis to Device Demonstration
UL https://suche.suub.uni-bremen.de/peid=cr-10.1149_06604.0047ecst&Exemplar=1&LAN=DE A1 Maitrejean, Sylvain A1 Loubet, Nicolas A1 Augendre, Emmanuel A1 Morin, Pierre Francois A1 Reboh, Shay A1 Bernier, Nicolas A1 Wacquez, Romain A1 Lherron, Benoit A1 Bonnevialle, Aurore A1 Liu, Qing A1 Hartmann, Jean-Michel A1 He, Hong A1 Halimaoui, Aomar A1 Li, Juntao A1 Pilorget, Sonia A1 Kanyandekwe, Joel A1 Grenouillet, Laurent A1 Chafik, Fadoua A1 Morand, Yves A1 Le Royer, Cyrille A1 Faynot, Oliver A1 Celik, Muhsin A1 Doris, Bruce A1 de Salvo, Barbara PB The Electrochemical Society YR 2015 SN 1938-5862 SN 1938-6737 JF ECS Transactions VO 66 IS 4 SP 47 OP 56 LK http://dx.doi.org/https://doi.org/10.1149/06604.0047ecst DO https://doi.org/10.1149/06604.0047ecst SF ELIB - SuUB Bremen
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