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A Benchmark of Germane and Digermane for the Low Temperatur..:
Hartmann, Jean-Michel
;
Aubin, Joris
;
Barnes, Jean-Paul
ECS Transactions. 75 (2016) 8 - p. 281-293 , 2016
Link:
https://doi.org/10.1149/07508.0281ecst
RT Journal T1
A Benchmark of Germane and Digermane for the Low Temperature Growth of Intrinsic and Heavily in-situ Boron-Doped SiGe
UL https://suche.suub.uni-bremen.de/peid=cr-10.1149_07508.0281ecst&Exemplar=1&LAN=DE A1 Hartmann, Jean-Michel A1 Aubin, Joris A1 Barnes, Jean-Paul PB The Electrochemical Society YR 2016 SN 1938-5862 SN 1938-6737 JF ECS Transactions VO 75 IS 8 SP 281 OP 293 LK http://dx.doi.org/https://doi.org/10.1149/07508.0281ecst DO https://doi.org/10.1149/07508.0281ecst SF ELIB - SuUB Bremen
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