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1 Ergebnisse
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(Invited) Selective Epitaxial Growth of High-P Si:P for Sou..:
Rosseel, Erik
;
Dhayalan, Sathish Kumar
;
Hikavyy, Andriy Yakovitch
...
ECS Transactions. 75 (2016) 8 - p. 347-359 , 2016
Link:
https://doi.org/10.1149/07508.0347ecst
RT Journal T1
(Invited) Selective Epitaxial Growth of High-P Si:P for Source/Drain Formation in Advanced Si nFETs
UL https://suche.suub.uni-bremen.de/peid=cr-10.1149_07508.0347ecst&Exemplar=1&LAN=DE A1 Rosseel, Erik A1 Dhayalan, Sathish Kumar A1 Hikavyy, Andriy Yakovitch A1 Loo, Roger A1 Profijt, Harald Benjamin A1 Kohen, David A1 Kubicek, Stefan A1 Chiarella, Thomas A1 Yu, Hao A1 Horiguchi, Naoto A1 Mocuta, Dan A1 Barla, Kathy A1 Thean, Aaron A1 Bartlett, Gregory A1 Margetis, Joe A1 Bhargava, Nupur A1 Tolle, John PB The Electrochemical Society YR 2016 SN 1938-5862 SN 1938-6737 JF ECS Transactions VO 75 IS 8 SP 347 OP 359 LK http://dx.doi.org/https://doi.org/10.1149/07508.0347ecst DO https://doi.org/10.1149/07508.0347ecst SF ELIB - SuUB Bremen
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