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1
Improvements in Reliability and Leakage Current Properties ..:
Park, Hong Bae
;
Cho, Moonju
;
Park, Jaehoo
...
Electrochemical and Solid-State Letters. 7 (2004) 11 - p. G254 , 2004
Link:
https://doi.org/10.1149/1.1804976
RT Journal T1 <Title>Improvements in Reliability and Leakage Current Properties of HfO[sub 2] Gate Dielectric Films by In Situ O[sub 3] Oxidation of Si Substrate</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1149_1.1804976&Exemplar=1&LAN=DE A1 Park, Hong Bae A1 Cho, Moonju A1 Park, Jaehoo A1 Lee, Suk Woo A1 Park, Tae Joo A1 Hwang, Cheol Seong PB The Electrochemical Society YR 2004 SN 1099-0062 JF Electrochemical and Solid-State Letters VO 7 IS 11 SP G254 LK http://dx.doi.org/https://doi.org/10.1149/1.1804976 DO https://doi.org/10.1149/1.1804976 SF ELIB - SuUB Bremen
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