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Modeling and Analysis of the Silicon Epitaxial Growth with ..:
Angermeier, D.
;
Monna, R.
;
Slaoui, A.
.
Journal of The Electrochemical Society. 144 (1997) 9 - p. 3256-3261 , 1997
Link:
https://doi.org/10.1149/1.1837993
RT Journal T1 <Title>Modeling and Analysis of the Silicon Epitaxial Growth with SiHCl3 in a Horizontal Rapid Thermal Chemical Vapor Deposition Reactor</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1149_1.1837993&Exemplar=1&LAN=DE A1 Angermeier, D. A1 Monna, R. A1 Slaoui, A. A1 Muller, J. C. PB The Electrochemical Society YR 1997 SN 0013-4651 SN 1945-7111 JF Journal of The Electrochemical Society VO 144 IS 9 SP 3256 OP 3261 LK http://dx.doi.org/https://doi.org/10.1149/1.1837993 DO https://doi.org/10.1149/1.1837993 SF ELIB - SuUB Bremen
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