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The Role of N 2 in Aspect‐Ratio‐Dependent Etching of SiO2:
Buie, M. J.
;
Joshi, A. M.
;
Regis, J.
Journal of The Electrochemical Society. 144 (1997) 11 - p. 3935-3939 , 1997
Link:
https://doi.org/10.1149/1.1838114
RT Journal T1 <Title>The Role of N 2 in Aspect‐Ratio‐Dependent Etching of SiO2</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1149_1.1838114&Exemplar=1&LAN=DE A1 Buie, M. J. A1 Joshi, A. M. A1 Regis, J. PB The Electrochemical Society YR 1997 SN 0013-4651 SN 1945-7111 JF Journal of The Electrochemical Society VO 144 IS 11 SP 3935 OP 3939 LK http://dx.doi.org/https://doi.org/10.1149/1.1838114 DO https://doi.org/10.1149/1.1838114 SF ELIB - SuUB Bremen
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