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Optimization of SiON Film Compositions for Encapsulation of..:
Ohshika, Katsushi
;
Yanazawa, Hiroshi
;
Kuroda, Jun
..
Journal of The Electrochemical Society. 145 (1998) 1 - p. 323-328 , 1998
Link:
https://doi.org/10.1149/1.1838253
RT Journal T1 <Title>Optimization of SiON Film Compositions for Encapsulation of Refractory Metal Gate GaAs Metal‐Semiconductor Field Effect Transistor</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1149_1.1838253&Exemplar=1&LAN=DE A1 Ohshika, Katsushi A1 Yanazawa, Hiroshi A1 Kuroda, Jun A1 Kayama, Satoshi A1 Sasaki, Yukio PB The Electrochemical Society YR 1998 SN 0013-4651 SN 1945-7111 JF Journal of The Electrochemical Society VO 145 IS 1 SP 323 OP 328 LK http://dx.doi.org/https://doi.org/10.1149/1.1838253 DO https://doi.org/10.1149/1.1838253 SF ELIB - SuUB Bremen
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