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1 Ergebnisse
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Silicon Gate Oxide Thickness Uniformity during HCl Oxidatio:
Osburn, C. M.
;
Reisman, A.
;
Stinson, M.
...
Journal of The Electrochemical Society. 138 (1991) 1 - p. 268-277 , 1991
Link:
https://doi.org/10.1149/1.2085554
RT Journal T1 <Title>Silicon Gate Oxide Thickness Uniformity during HCl Oxidation</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1149_1.2085554&Exemplar=1&LAN=DE A1 Osburn, C. M. A1 Reisman, A. A1 Stinson, M. A1 Lipkin, L. A1 Berger, H. A1 Tollin, C. PB The Electrochemical Society YR 1991 SN 0013-4651 SN 1945-7111 JF Journal of The Electrochemical Society VO 138 IS 1 SP 268 OP 277 LK http://dx.doi.org/https://doi.org/10.1149/1.2085554 DO https://doi.org/10.1149/1.2085554 SF ELIB - SuUB Bremen
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