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Improved Via Hole Etching for Source Grounding of Microwave..:
Daga, O. P.
;
Fricke, K.
;
Hartnagel, H. L.
Journal of The Electrochemical Society. 133 (1986) 12 - p. 2660-2661 , 1986
Link:
https://doi.org/10.1149/1.2108500
RT Journal T1 <Title>Improved Via Hole Etching for Source Grounding of Microwave MESFET</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1149_1.2108500&Exemplar=1&LAN=DE A1 Daga, O. P. A1 Fricke, K. A1 Hartnagel, H. L. PB The Electrochemical Society YR 1986 SN 0013-4651 SN 1945-7111 JF Journal of The Electrochemical Society VO 133 IS 12 SP 2660 OP 2661 LK http://dx.doi.org/https://doi.org/10.1149/1.2108500 DO https://doi.org/10.1149/1.2108500 SF ELIB - SuUB Bremen
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