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The Dependence of the SiO2 Defect Density on Both the Appli..:
Zakzouk, Abdel‐Khalek Mohamed
Journal of The Electrochemical Society. 126 (1979) 10 - p. 1771-1779 , 1979
Link:
https://doi.org/10.1149/1.2128794
RT Journal T1 <Title>The Dependence of the SiO2 Defect Density on Both the Applied Electric Field and the Oxide Thickness</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1149_1.2128794&Exemplar=1&LAN=DE A1 Zakzouk, Abdel‐Khalek Mohamed PB The Electrochemical Society YR 1979 SN 0013-4651 SN 1945-7111 JF Journal of The Electrochemical Society VO 126 IS 10 SP 1771 OP 1779 LK http://dx.doi.org/https://doi.org/10.1149/1.2128794 DO https://doi.org/10.1149/1.2128794 SF ELIB - SuUB Bremen
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