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Highly-Strained Silicon-On-Insulator Development:
Akatsu, Takeshi
;
Hartmann, Jean-Michel
;
Aulnette, Cécile
...
ECS Transactions. 3 (2006) 6 - p. 107-117 , 2006
Link:
https://doi.org/10.1149/1.2357060
RT Journal T1
Highly-Strained Silicon-On-Insulator Development
UL https://suche.suub.uni-bremen.de/peid=cr-10.1149_1.2357060&Exemplar=1&LAN=DE A1 Akatsu, Takeshi A1 Hartmann, Jean-Michel A1 Aulnette, Cécile A1 Le Vaillant, Yves-Matthieu A1 Rouchon, Denis A1 Abbadie, Alexandra A1 Bogumilowicz, Yann A1 Portigliatti, Lionel A1 Colnat, Cyrille A1 Boudou, Nicolas A1 Lallement, Fabrice A1 Triolet, Fanny A1 Figuet, Christophe A1 Martinez, Muriel A1 Nguyen, Phuong A1 Delattre, Cécile A1 Tsyganenko, Kira A1 Berne, Cécile A1 Allibert, Frédéric A1 Deguet, Chrystel PB The Electrochemical Society YR 2006 SN 1938-5862 SN 1938-6737 JF ECS Transactions VO 3 IS 6 SP 107 OP 117 LK http://dx.doi.org/https://doi.org/10.1149/1.2357060 DO https://doi.org/10.1149/1.2357060 SF ELIB - SuUB Bremen
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