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Impact of Thin La2O3 Insertion for HfO2 MOSFET:
Kakushima, Kuniyuki
;
Okamoto, Kouichi
;
Adachi, Manabu
...
ECS Transactions. 13 (2008) 2 - p. 29-37 , 2008
Link:
https://doi.org/10.1149/1.2908613
RT Journal T1
Impact of Thin La2O3 Insertion for HfO2 MOSFET
UL https://suche.suub.uni-bremen.de/peid=cr-10.1149_1.2908613&Exemplar=1&LAN=DE A1 Kakushima, Kuniyuki A1 Okamoto, Kouichi A1 Adachi, Manabu A1 Tachi, Kiichi A1 Sato, Soushi A1 Kawanago, Takamasa A1 Song, Jaeyeol A1 Ahmet, Parhat A1 Sugii, Nobuyuki A1 Tsutsui, Kazuo A1 Hattori, Takeo A1 Iwai, Hiroshi PB The Electrochemical Society YR 2008 SN 1938-5862 SN 1938-6737 JF ECS Transactions VO 13 IS 2 SP 29 OP 37 LK http://dx.doi.org/https://doi.org/10.1149/1.2908613 DO https://doi.org/10.1149/1.2908613 SF ELIB - SuUB Bremen
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