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1 Ergebnisse
1
Thickness Dependence of Gate Dielectric and Active Semicond..:
Kim, Dong Hun
;
Cho, Nam Gyu
;
Han, Seung Ho
..
Electrochemical and Solid-State Letters. 11 (2008) 12 - p. H317 , 2008
Link:
https://doi.org/10.1149/1.2978961
RT Journal T1 <Title>Thickness Dependence of Gate Dielectric and Active Semiconductor on InGaZnO[sub 4] TFT Fabricated on Plastic Substrates</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1149_1.2978961&Exemplar=1&LAN=DE A1 Kim, Dong Hun A1 Cho, Nam Gyu A1 Han, Seung Ho A1 Kim, Ho-Gi A1 Kim, Il-Doo PB The Electrochemical Society YR 2008 SN 1099-0062 JF Electrochemical and Solid-State Letters VO 11 IS 12 SP H317 LK http://dx.doi.org/https://doi.org/10.1149/1.2978961 DO https://doi.org/10.1149/1.2978961 SF ELIB - SuUB Bremen
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