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1 Ergebnisse
1
Shallow Trench Isolation Stress Effect on NMOS Transistor L..:
Ju, Jianhua
;
Liu, Eric
;
Shen, Zhaoxu
...
ECS Transactions. 18 (2009) 1 - p. 117-122 , 2009
Link:
https://doi.org/10.1149/1.3096438
RT Journal T1
Shallow Trench Isolation Stress Effect on NMOS Transistor Leakage, SRAM Standby Current and VCCMIN
UL https://suche.suub.uni-bremen.de/peid=cr-10.1149_1.3096438&Exemplar=1&LAN=DE A1 Ju, Jianhua A1 Liu, Eric A1 Shen, Zhaoxu A1 Zhou, Allan A1 Liu, Jinhua A1 Deng, Daniel A1 Ren, Cathy A1 Wei, Susu A1 Ho, Hokmin A1 Ning, Jay PB The Electrochemical Society YR 2009 SN 1938-5862 SN 1938-6737 JF ECS Transactions VO 18 IS 1 SP 117 OP 122 LK http://dx.doi.org/https://doi.org/10.1149/1.3096438 DO https://doi.org/10.1149/1.3096438 SF ELIB - SuUB Bremen
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