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Thermal Stability Improvement of NiSi on Gate by High Dosag..:
Hsieh, Chih-Ming
;
Tsui, Bing-Yue
;
Hung, Yu-Ren
...
Electrochemical and Solid-State Letters. 12 (2009) 6 - p. H226 , 2009
Link:
https://doi.org/10.1149/1.3115403
RT Journal T1 <Title>Thermal Stability Improvement of NiSi on Gate by High Dosage Germanium Implantation</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1149_1.3115403&Exemplar=1&LAN=DE A1 Hsieh, Chih-Ming A1 Tsui, Bing-Yue A1 Hung, Yu-Ren A1 Yang, York A1 Shen, Ryan A1 Cheng, Sam A1 Lin, Tony PB The Electrochemical Society YR 2009 SN 1099-0062 JF Electrochemical and Solid-State Letters VO 12 IS 6 SP H226 LK http://dx.doi.org/https://doi.org/10.1149/1.3115403 DO https://doi.org/10.1149/1.3115403 SF ELIB - SuUB Bremen
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