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1 Ergebnisse
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Interfacial Behavior of Surface Activated p-GaP/n-GaAs Bond..:
Howlader, M. M. R.
;
Suga, T.
;
Zhang, F.
..
Electrochemical and Solid-State Letters. 13 (2010) 3 - p. H61 , 2010
Link:
https://doi.org/10.1149/1.3272957
RT Journal T1 <Title>Interfacial Behavior of Surface Activated p-GaP/n-GaAs Bonded Wafers at Room Temperature</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1149_1.3272957&Exemplar=1&LAN=DE A1 Howlader, M. M. R. A1 Suga, T. A1 Zhang, F. A1 Lee, T. H. A1 Kim, M. J. PB The Electrochemical Society YR 2010 SN 1099-0062 JF Electrochemical and Solid-State Letters VO 13 IS 3 SP H61 LK http://dx.doi.org/https://doi.org/10.1149/1.3272957 DO https://doi.org/10.1149/1.3272957 SF ELIB - SuUB Bremen
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