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1 Ergebnisse
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Self-Aligned Gate-First In[sub 0.7]Ga[sub 0.3]As n-MOSFETs ..:
Gong, Xiao
;
Ivana
;
Chin, Hock-Chun
...
Electrochemical and Solid-State Letters. 14 (2011) 3 - p. H117 , 2011
Link:
https://doi.org/10.1149/1.3526139
RT Journal T1 <Title>Self-Aligned Gate-First In[sub 0.7]Ga[sub 0.3]As n-MOSFETs with an InP Capping Layer for Performance Enhancement</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1149_1.3526139&Exemplar=1&LAN=DE A1 Gong, Xiao A1 Ivana A1 Chin, Hock-Chun A1 Zhu, Zhu A1 Lin, You-Ru A1 Ko, Chih-Hsin A1 Wann, Clement H. A1 Yeo, Yee-Chia PB The Electrochemical Society YR 2011 SN 1099-0062 JF Electrochemical and Solid-State Letters VO 14 IS 3 SP H117 LK http://dx.doi.org/https://doi.org/10.1149/1.3526139 DO https://doi.org/10.1149/1.3526139 SF ELIB - SuUB Bremen
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