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1 Ergebnisse
1
Process-Induced ReRAM Performance Improvement of Atomic Lay..:
Consiglio, Steven
;
Higuchi, Hisashi
;
Ando, Takashi
...
ECS Transactions. 102 (2021) 2 - p. 19-28 , 2021
Link:
https://doi.org/10.1149/10202.0019ecst
RT Journal T1
Process-Induced ReRAM Performance Improvement of Atomic Layer Deposited HfO2 for Analog In-Memory Computing Applications
UL https://suche.suub.uni-bremen.de/peid=cr-10.1149_10202.0019ecst&Exemplar=1&LAN=DE A1 Consiglio, Steven A1 Higuchi, Hisashi A1 Ando, Takashi A1 Jamison, Paul A1 Seo, Soon-Cheon A1 Kong, Dexin A1 Kim, Youngseok A1 Tapily, Kandabara A1 Clark, Robert D A1 Hopstaken, Marinus A1 Cartier, Eduard A1 Tsunomura, Takaaki A1 Wajda, Cory S A1 Soave, Robert A1 Narayanan, Vijay A1 Leusink, Gert J PB The Electrochemical Society YR 2021 SN 1938-5862 SN 1938-6737 JF ECS Transactions VO 102 IS 2 SP 19 OP 28 LK http://dx.doi.org/https://doi.org/10.1149/10202.0019ecst DO https://doi.org/10.1149/10202.0019ecst SF ELIB - SuUB Bremen
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