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(Invited) Study of HfO2-Based High-k Gate Insulators for Ga..:
Nabatame, Toshihide
;
Maeda, Erika
;
Inoue, Mari
...
ECS Transactions. 104 (2021) 4 - p. 113-120 , 2021
Link:
https://doi.org/10.1149/10404.0113ecst
RT Journal T1
(Invited) Study of HfO2-Based High-k Gate Insulators for GaN Power Device
UL https://suche.suub.uni-bremen.de/peid=cr-10.1149_10404.0113ecst&Exemplar=1&LAN=DE A1 Nabatame, Toshihide A1 Maeda, Erika A1 Inoue, Mari A1 Hirose, Masafumi A1 Ochi, Ryota A1 Sawada, Tomomi A1 Irokawa, Yoshihiro A1 Hashizume, Tamotsu A1 Shiozaki, Koji A1 Onaya, Takashi A1 Tsukagoshi, Kazuhito A1 Koide, Yasuo PB The Electrochemical Society YR 2021 SN 1938-5862 SN 1938-6737 JF ECS Transactions VO 104 IS 4 SP 113 OP 120 LK http://dx.doi.org/https://doi.org/10.1149/10404.0113ecst DO https://doi.org/10.1149/10404.0113ecst SF ELIB - SuUB Bremen
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