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1 Ergebnisse
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CMOS without Doping on SOI: Multi-Gate Si-Nanowire Transist..:
Schwalke, U.
;
Krauss, T.
;
Wessely, F.
ECS Journal of Solid State Science and Technology. 2 (2013) 6 - p. Q88-Q93 , 2013
Link:
https://doi.org/10.1149/2.002307jss
RT Journal T1 <Title>CMOS without Doping on SOI: Multi-Gate Si-Nanowire Transistors for Logic and Memory Applications</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1149_2.002307jss&Exemplar=1&LAN=DE A1 Schwalke, U. A1 Krauss, T. A1 Wessely, F. PB The Electrochemical Society YR 2013 SN 2162-8769 SN 2162-8777 JF ECS Journal of Solid State Science and Technology VO 2 IS 6 SP Q88 OP Q93 LK http://dx.doi.org/https://doi.org/10.1149/2.002307jss DO https://doi.org/10.1149/2.002307jss SF ELIB - SuUB Bremen
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