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Investigation of the Composition of the Si/SiO2Interface in..:
Kissinger, G.
;
Schubert, M. A.
;
Kot, D.
.
ECS Journal of Solid State Science and Technology. 6 (2017) 7 - p. N54-N63 , 2017
Link:
https://doi.org/10.1149/2.0061707jss
RT Journal T1 <Title>Investigation of the Composition of the Si/SiO2Interface in Oxide Precipitates and Oxide Layers on Silicon by STEM/EELS</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1149_2.0061707jss&Exemplar=1&LAN=DE A1 Kissinger, G. A1 Schubert, M. A. A1 Kot, D. A1 Grabolla, T. PB The Electrochemical Society YR 2017 SN 2162-8769 SN 2162-8777 JF ECS Journal of Solid State Science and Technology VO 6 IS 7 SP N54 OP N63 LK http://dx.doi.org/https://doi.org/10.1149/2.0061707jss DO https://doi.org/10.1149/2.0061707jss SF ELIB - SuUB Bremen
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