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1 Ergebnisse
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Degradation Characteristics of AlGaN/GaN MOS-Heterostructur..:
Keum, Dongmin
;
Cho, Geunho
;
Kim, Hyungtak
ECS Journal of Solid State Science and Technology. 6 (2017) 11 - p. S3030-S3033 , 2017
Link:
https://doi.org/10.1149/2.0071711jss
RT Journal T1 <Title>Degradation Characteristics of AlGaN/GaN MOS-Heterostructure FETs by Alpha-Particle Irradiation</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1149_2.0071711jss&Exemplar=1&LAN=DE A1 Keum, Dongmin A1 Cho, Geunho A1 Kim, Hyungtak PB The Electrochemical Society YR 2017 SN 2162-8769 SN 2162-8777 JF ECS Journal of Solid State Science and Technology VO 6 IS 11 SP S3030 OP S3033 LK http://dx.doi.org/https://doi.org/10.1149/2.0071711jss DO https://doi.org/10.1149/2.0071711jss SF ELIB - SuUB Bremen
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