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1 Ergebnisse
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Room Temperature SiC-SiO2Wafer Bonding Enhanced by Using an..:
Mu, F.
;
Iguchi, K.
;
Nakazawa, H.
...
ECS Journal of Solid State Science and Technology. 6 (2017) 5 - p. P227-P230 , 2017
Link:
https://doi.org/10.1149/2.0081705jss
RT Journal T1 <Title>Room Temperature SiC-SiO2Wafer Bonding Enhanced by Using an Intermediate Si Nano Layer</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1149_2.0081705jss&Exemplar=1&LAN=DE A1 Mu, F. A1 Iguchi, K. A1 Nakazawa, H. A1 Takahashi, Y. A1 He, R. A1 Fujino, M. A1 Suga, T. PB The Electrochemical Society YR 2017 SN 2162-8769 SN 2162-8777 JF ECS Journal of Solid State Science and Technology VO 6 IS 5 SP P227 OP P230 LK http://dx.doi.org/https://doi.org/10.1149/2.0081705jss DO https://doi.org/10.1149/2.0081705jss SF ELIB - SuUB Bremen
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