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1 Ergebnisse
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Effective Capacitance Area for Pseudo-MOSFET Characterizati..:
Fernandez, Cristina
;
Rodriguez, Noel
;
Ohata, Akiko
..
ECS Journal of Solid State Science and Technology. 2 (2013) 12 - p. P529-P533 , 2013
Link:
https://doi.org/10.1149/2.010312jss
RT Journal T1 <Title>Effective Capacitance Area for Pseudo-MOSFET Characterization of Bare SOI Wafers by Split-C(V) Measurements</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1149_2.010312jss&Exemplar=1&LAN=DE A1 Fernandez, Cristina A1 Rodriguez, Noel A1 Ohata, Akiko A1 Gamiz, Francisco A1 Cristoloveanu, Sorin PB The Electrochemical Society YR 2013 SN 2162-8769 SN 2162-8777 JF ECS Journal of Solid State Science and Technology VO 2 IS 12 SP P529 OP P533 LK http://dx.doi.org/https://doi.org/10.1149/2.010312jss DO https://doi.org/10.1149/2.010312jss SF ELIB - SuUB Bremen
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