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Impact of the Low Temperature Gate Dielectrics on Device Pe..:
Nag, Manoj
;
Bhoolokam, Ajay
;
Steudel, Soeren
...
ECS Journal of Solid State Science and Technology. 4 (2015) 8 - p. N99-N102 , 2015
Link:
https://doi.org/10.1149/2.0121508jss
RT Journal T1 <Title>Impact of the Low Temperature Gate Dielectrics on Device Performance and Bias-Stress Stabilities of a-IGZO Thin-Film Transistors</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1149_2.0121508jss&Exemplar=1&LAN=DE A1 Nag, Manoj A1 Bhoolokam, Ajay A1 Steudel, Soeren A1 Genoe, Jan A1 Groeseneken, Guido A1 Heremans, Paul PB The Electrochemical Society YR 2015 SN 2162-8769 SN 2162-8777 JF ECS Journal of Solid State Science and Technology VO 4 IS 8 SP N99 OP N102 LK http://dx.doi.org/https://doi.org/10.1149/2.0121508jss DO https://doi.org/10.1149/2.0121508jss SF ELIB - SuUB Bremen
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