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1 Ergebnisse
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Influence of Oxide Interlayer by TiN Metal Gate in High-k F..:
He, Yonggen
;
Chen, Yong
;
Liu, Hailong
...
ECS Journal of Solid State Science and Technology. 6 (2017) 5 - p. P296-P299 , 2017
Link:
https://doi.org/10.1149/2.0221705jss
RT Journal T1 <Title>Influence of Oxide Interlayer by TiN Metal Gate in High-k First CMOS Devices</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1149_2.0221705jss&Exemplar=1&LAN=DE A1 He, Yonggen A1 Chen, Yong A1 Liu, Hailong A1 He, Youfeng A1 Wu, Jingang A1 Zhang, David Wei PB The Electrochemical Society YR 2017 SN 2162-8769 SN 2162-8777 JF ECS Journal of Solid State Science and Technology VO 6 IS 5 SP P296 OP P299 LK http://dx.doi.org/https://doi.org/10.1149/2.0221705jss DO https://doi.org/10.1149/2.0221705jss SF ELIB - SuUB Bremen
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