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Growth, Defects and Doping of 3C-SiC on Hexagonal Polytypes:
Yakimova, Rositsa
;
Ivanov, Ivan G.
;
Vines, Lasse
...
ECS Journal of Solid State Science and Technology. 6 (2017) 10 - p. P741-P745 , 2017
Link:
https://doi.org/10.1149/2.0281710jss
RT Journal T1 <Title>Growth, Defects and Doping of 3C-SiC on Hexagonal Polytypes</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1149_2.0281710jss&Exemplar=1&LAN=DE A1 Yakimova, Rositsa A1 Ivanov, Ivan G. A1 Vines, Lasse A1 Linnarsson, Margareta K. A1 Gällström, Andreas A1 Giannazzo, Filippo A1 Roccaforte, Fabrizio A1 Wellmann, Peter A1 Syväjärvi, Mikael A1 Jokubavicius, Valdas PB The Electrochemical Society YR 2017 SN 2162-8769 SN 2162-8777 JF ECS Journal of Solid State Science and Technology VO 6 IS 10 SP P741 OP P745 LK http://dx.doi.org/https://doi.org/10.1149/2.0281710jss DO https://doi.org/10.1149/2.0281710jss SF ELIB - SuUB Bremen
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