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1 Ergebnisse
1
Silicon-Carbon Source and Drain Stressors: Carbon Profile D..:
Zhou, Qian
;
Koh, Shao-Ming
;
Tong, Yi
...
Journal of The Electrochemical Society. 159 (2012) 4 - p. H425-H432 , 2012
Link:
https://doi.org/10.1149/2.072204jes
RT Journal T1 <Title>Silicon-Carbon Source and Drain Stressors: Carbon Profile Design by Ion Implantation</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1149_2.072204jes&Exemplar=1&LAN=DE A1 Zhou, Qian A1 Koh, Shao-Ming A1 Tong, Yi A1 Henry, Todd A1 Erokhin, Yuri A1 Yeo, Yee-Chia PB The Electrochemical Society YR 2012 SN 0013-4651 SN 1945-7111 JF Journal of The Electrochemical Society VO 159 IS 4 SP H425 OP H432 LK http://dx.doi.org/https://doi.org/10.1149/2.072204jes DO https://doi.org/10.1149/2.072204jes SF ELIB - SuUB Bremen
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