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Source/Drain Materials for Ge nMOS Devices: Phosphorus Acti..:
Vohra, Anurag
;
Makkonen, Ilja
;
Pourtois, Geoffrey
...
ECS Journal of Solid State Science and Technology. 9 (2020) 4 - p. 044010 , 2020
Link:
https://doi.org/10.1149/2162-8777/ab8d91
RT Journal T1 <Title>Source/Drain Materials for Ge nMOS Devices: Phosphorus Activation in Epitaxial Si, Ge, Ge1−xSnx and SiyGe1−x−ySnx</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1149_2162-8777_ab8d91&Exemplar=1&LAN=DE A1 Vohra, Anurag A1 Makkonen, Ilja A1 Pourtois, Geoffrey A1 Slotte, Jonatan A1 Porret, Clement A1 Rosseel, Erik A1 Khanam, Afrina A1 Tirrito, Matteo A1 Douhard, Bastien A1 Loo, Roger A1 Vandervorst, Wilfried PB The Electrochemical Society YR 2020 SN 2162-8769 SN 2162-8777 JF ECS Journal of Solid State Science and Technology VO 9 IS 4 SP 044010 LK http://dx.doi.org/https://doi.org/10.1149/2162-8777/ab8d91 DO https://doi.org/10.1149/2162-8777/ab8d91 SF ELIB - SuUB Bremen
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