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1 Ergebnisse
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Optimization of MIS type Non-Volatile Memory Device with Al..:
Yoon, Geonju
;
Kim, Taeyong
;
Agrawal, Khushabu
...
ECS Journal of Solid State Science and Technology. 9 (2020) 7 - p. 075004 , 2020
Link:
https://doi.org/10.1149/2162-8777/abaf10
RT Journal T1
Optimization of MIS type Non-Volatile Memory Device with Al-Doped HfO2 as Charge Trapping Layer
UL https://suche.suub.uni-bremen.de/peid=cr-10.1149_2162-8777_abaf10&Exemplar=1&LAN=DE A1 Yoon, Geonju A1 Kim, Taeyong A1 Agrawal, Khushabu A1 Kim, Jaemin A1 Park, Jinsu A1 Kim, Hyun-Hoo A1 Cho, Eun-Chel A1 Yi, Junsin PB The Electrochemical Society YR 2020 SN 2162-8777 JF ECS Journal of Solid State Science and Technology VO 9 IS 7 SP 075004 LK http://dx.doi.org/https://doi.org/10.1149/2162-8777/abaf10 DO https://doi.org/10.1149/2162-8777/abaf10 SF ELIB - SuUB Bremen
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