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Langmuir-Type Expressions for In-Situ Co-Doping of C with B..:
Murota, Junichi
;
Ishii, Hiromu
ECS Journal of Solid State Science and Technology. 10 (2021) 6 - p. 064004 , 2021
Link:
https://doi.org/10.1149/2162-8777/ac07fd
RT Journal T1 <Title>Langmuir-Type Expressions for In-Situ Co-Doping of C with B or P in Si1–xGex Epitaxial Growth by Chemical Vapor Deposition</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1149_2162-8777_ac07fd&Exemplar=1&LAN=DE A1 Murota, Junichi A1 Ishii, Hiromu PB The Electrochemical Society YR 2021 SN 2162-8769 SN 2162-8777 JF ECS Journal of Solid State Science and Technology VO 10 IS 6 SP 064004 LK http://dx.doi.org/https://doi.org/10.1149/2162-8777/ac07fd DO https://doi.org/10.1149/2162-8777/ac07fd SF ELIB - SuUB Bremen
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