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Gate-Bias-Induced Threshold Voltage Shifts in GaN FATFETs:
Irokawa, Yoshihiro
;
Mitsuishi, Kazutaka
;
Izumi, Takatomi
...
ECS Journal of Solid State Science and Technology. 12 (2023) 5 - p. 055007 , 2023
Link:
https://doi.org/10.1149/2162-8777/acd1b4
RT Journal T1 <Title>Gate-Bias-Induced Threshold Voltage Shifts in GaN FATFETs</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1149_2162-8777_acd1b4&Exemplar=1&LAN=DE A1 Irokawa, Yoshihiro A1 Mitsuishi, Kazutaka A1 Izumi, Takatomi A1 Nishii, Junya A1 Nabatame, Toshihide A1 Koide, Yasuo PB The Electrochemical Society YR 2023 SN 2162-8769 SN 2162-8777 JF ECS Journal of Solid State Science and Technology VO 12 IS 5 SP 055007 LK http://dx.doi.org/https://doi.org/10.1149/2162-8777/acd1b4 DO https://doi.org/10.1149/2162-8777/acd1b4 SF ELIB - SuUB Bremen
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