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1 Ergebnisse
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Dependence of Device Performances on Fin Ratios of AlGaN/Ga..:
Lai, Yu-Jun
;
Lin, Hong-Che
;
Liu, Yu-Chen
..
ECS Journal of Solid State Science and Technology. 12 (2023) 9 - p. 095001 , 2023
Link:
https://doi.org/10.1149/2162-8777/acf40a
RT Journal T1 <Title>Dependence of Device Performances on Fin Ratios of AlGaN/GaN Nanoscale Fin-HEMTs</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1149_2162-8777_acf40a&Exemplar=1&LAN=DE A1 Lai, Yu-Jun A1 Lin, Hong-Che A1 Liu, Yu-Chen A1 Chen, Chii-Wen A1 Wu, Meng-Chyi PB The Electrochemical Society YR 2023 SN 2162-8769 SN 2162-8777 JF ECS Journal of Solid State Science and Technology VO 12 IS 9 SP 095001 LK http://dx.doi.org/https://doi.org/10.1149/2162-8777/acf40a DO https://doi.org/10.1149/2162-8777/acf40a SF ELIB - SuUB Bremen
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