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Properties of Erbium-Doped Silicon Oxycarbide Thin Films:
García, Iván
;
Morales, Crisóforo
;
Rosendo, Enrique
...
ECS Journal of Solid State Science and Technology. 12 (2023) 12 - p. 126006 , 2023
Link:
https://doi.org/10.1149/2162-8777/ad16f5
RT Journal T1 <Title>Properties of Erbium-Doped Silicon Oxycarbide Thin Films</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1149_2162-8777_ad16f5&Exemplar=1&LAN=DE A1 García, Iván A1 Morales, Crisóforo A1 Rosendo, Enrique A1 Pérez, María A1 Coyopol, Antonio A1 Galeazzi, Reina A1 García, Godofredo A1 Romano, Román PB The Electrochemical Society YR 2023 SN 2162-8769 SN 2162-8777 JF ECS Journal of Solid State Science and Technology VO 12 IS 12 SP 126006 LK http://dx.doi.org/https://doi.org/10.1149/2162-8777/ad16f5 DO https://doi.org/10.1149/2162-8777/ad16f5 SF ELIB - SuUB Bremen
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