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1 Ergebnisse
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Effect of Film Density on MgSiO3-Based Resistive Random-Acc..:
Jheng, Fu-Yuan
;
Chang, Sheng-Po
ECS Journal of Solid State Science and Technology. 13 (2024) 2 - p. 025004 , 2024
Link:
https://doi.org/10.1149/2162-8777/ad2aeb
RT Journal T1 <Title>Effect of Film Density on MgSiO3-Based Resistive Random-Access Memory</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1149_2162-8777_ad2aeb&Exemplar=1&LAN=DE A1 Jheng, Fu-Yuan A1 Chang, Sheng-Po PB The Electrochemical Society YR 2024 SN 2162-8769 SN 2162-8777 JF ECS Journal of Solid State Science and Technology VO 13 IS 2 SP 025004 LK http://dx.doi.org/https://doi.org/10.1149/2162-8777/ad2aeb DO https://doi.org/10.1149/2162-8777/ad2aeb SF ELIB - SuUB Bremen
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