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Impact of Dual-Gate Configuration on the Endurance of Ferro..:
Ma, William Cheng-Yu
;
Su, Chun-Jung
;
Kao, Kuo-Hsing
...
ECS Journal of Solid State Science and Technology. 13 (2024) 4 - p. 045003 , 2024
Link:
https://doi.org/10.1149/2162-8777/ad3c21
RT Journal T1
Impact of Dual-Gate Configuration on the Endurance of Ferroelectric Thin-Film Transistors With Nanosheet Polycrystalline-Silicon Channel Film
UL https://suche.suub.uni-bremen.de/peid=cr-10.1149_2162-8777_ad3c21&Exemplar=1&LAN=DE A1 Ma, William Cheng-Yu A1 Su, Chun-Jung A1 Kao, Kuo-Hsing A1 Cho, Ta-Chun A1 Guo, Jing-Qiang A1 Wu, Cheng-Jun A1 Wu, Po-Ying A1 Hung, Jia-Yuan PB The Electrochemical Society YR 2024 SN 2162-8769 SN 2162-8777 JF ECS Journal of Solid State Science and Technology VO 13 IS 4 SP 045003 LK http://dx.doi.org/https://doi.org/10.1149/2162-8777/ad3c21 DO https://doi.org/10.1149/2162-8777/ad3c21 SF ELIB - SuUB Bremen
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