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1 Ergebnisse
1
Tunable EOT Scaling Down to 0.55 nm for HfO2-Based Gate-Sta..:
Li, Hui-Hsuan
;
Chen, Shang-Chiun
;
Lin, Yu-Hsien
.
ECS Journal of Solid State Science and Technology. 13 (2024) 5 - p. 055001 , 2024
Link:
https://doi.org/10.1149/2162-8777/ad430a
RT Journal T1 <Title>Tunable EOT Scaling Down to 0.55 nm for HfO2-Based Gate-Stacks on Ge Substrate by In Situ H2 Plasma Treatment</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1149_2162-8777_ad430a&Exemplar=1&LAN=DE A1 Li, Hui-Hsuan A1 Chen, Shang-Chiun A1 Lin, Yu-Hsien A1 Chien, Chao-Hsin PB The Electrochemical Society YR 2024 SN 2162-8769 SN 2162-8777 JF ECS Journal of Solid State Science and Technology VO 13 IS 5 SP 055001 LK http://dx.doi.org/https://doi.org/10.1149/2162-8777/ad430a DO https://doi.org/10.1149/2162-8777/ad430a SF ELIB - SuUB Bremen
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