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1 Ergebnisse
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Comparative high-k material gate spacer impact in DG-FinFET..:
F. Roslan, Ameer
;
Salehuddin, F.
;
M. Zain, A.S.
...
Indonesian Journal of Electrical Engineering and Computer Science. 14 (2019) 2 - p. 573 , 2019
Link:
https://doi.org/10.11591/ijeecs.v14.i2.pp573-580
RT Journal T1 <Title>Comparative high-k material gate spacer impact in DG-FinFET parameter variations between two structures</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.11591_ijeecs.v14.i2.pp573-580&Exemplar=1&LAN=DE A1 F. Roslan, Ameer A1 Salehuddin, F. A1 M. Zain, A.S. A1 Kaharudin, K.E. A1 Ahmad, I. A1 Hazura, H. A1 Hanim, A.R. A1 Idris, S.K. PB Institute of Advanced Engineering and Science YR 2019 SN 2502-4760 SN 2502-4752 JF Indonesian Journal of Electrical Engineering and Computer Science VO 14 IS 2 SP 573 LK http://dx.doi.org/https://doi.org/10.11591/ijeecs.v14.i2.pp573-580 DO https://doi.org/10.11591/ijeecs.v14.i2.pp573-580 SF ELIB - SuUB Bremen
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